Parameterisation of density functional tight binding theory for transport modelling in nanoscale devices: including the repulsive potential
The project aims to advance the state of the art in atomic level modelling of electron and phonon transport in solid state nano-devices. The goal is to deliver a novel comprehensive tool for semi-automatic parameterisation of density-functional tight binding theory (DFTB). This is necessary to accurately and efficiently model atomic structure, electronic and dielectric properties, carrier transport and interaction with light in a single, self-consistent formalism, in systems that are inaccessible to ab initio or semi-empirical methods. For example, accurate DFTB parameters are prerequisite for a quantitative enquiry are three new, diverse, and very relevant contemporary problems: 1) impact of dopant-segregation on current-voltage characteristics of ultra-scaled Si nanowire MOSFETs; 2) fundamental processes of carrier separation in novel photovoltaic materials based on metal-halide perovskite; 3) mechanism of photo-catalytic water-splitting at the interface between different phases of crystalline gallium oxide.